Noyce Patent No. 2,981,877 Semiconductor Device-and-Lead Structure Robert Noyce was born in Iowa in 1927. He received a B.A. degree from Grinell College (Iowa) in 1949 and a Ph.D. in physical electronics from MIT in 1953. After conducting research at Philco Corporation until 1956, Noyce joined Shockley Semiconductor Laboratory in Palo Alto, California, where he worked on transistor technology.
In 1957, he co-founded the Fairchild Semiconductor Corp. in Mountain View, California. He was research director until early 1959 when he became vice-president and general manager. As research director, he was responsible for initial development of the firm's silicon mesa and planar transistor product lines.
Later, in 1968, he co-founded Intel Corp. with Gordon E. Moore, who had also been a Fairchild co-founder and member of the Shockley laboratory staff. Noyce served as president of Intel until 1975 and chairman of the board from 1975-79.
During his lifetime, Dr. Noyce received the Ballantine Medal of the Franklin Institute and the Ciedo Brunetti Award of the IEEE for work on the integrated circuit. He also received the National Medal of Science and the IEEE Faraday Medal in 1979. In all, he held 16 patents for semiconductor devices, methods and structures.
Dr. Noyce died June 3, 1990 in Austin, Texas.
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